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2SA733T Elektronische Bauelemente -60 V, -150 mA PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES Power dissipation G H TO-92 1Emitter 2Collector 3Base PACKAGE INFORMATION Weight: 0.2100g (Approximately) A J D B REF. Collector 2 K 3 Base E C F 1 Emitter A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Total Power Dissipation Junction, Storage Temperature unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -60 -50 -5 -100 250 +150, -55 ~ +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE hFE fT Cob NF (noise figures) unless otherwise specified) Min. -60 -50 -5 -0.58 90 100 - Typ. -0.18 -0.62 200 - Max. -100 -100 -0.30 -0.68 600 6 20 Unit V V V nA nA V V MHz pF dB IC=-50uA, IE = 0 IC=-1mA, IB = 0 IE=-50uA, IC = 0 VCB=-60V, IE = 0 VEB=-5V, IC = 0 Test Conditions IC=-100mA, IB=-10mA VCE = -6V, IC = -1.0mA VCE=-6V, IC=-1mA VCE=-6V, IC=-10mA VCB = -10V, IE = 0, f = 1 MHz VCE=-6V, IC=-0.3mA, Rg=10k, f=100HZ CLASSIFICATION OF hFE Rank Range R 90 - 180 Q 135 - 270 P 200 - 400 K 300 - 600 01-June-2005 Rev. B Page 1 of 2 2SA733T Elektronische Bauelemente -60 V, -150 mA PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. B Page 2 of 2 |
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