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 2SA733T
Elektronische Bauelemente -60 V, -150 mA PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen and lead free
FEATURES
Power dissipation
G H
TO-92
1Emitter 2Collector 3Base
PACKAGE INFORMATION
Weight: 0.2100g (Approximately)
A J D B
REF.
Collector
2
K
3
Base
E C F
1
Emitter
A B C D E F G H J K
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Total Power Dissipation Junction, Storage Temperature
unless otherwise noted)
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
-60 -50 -5 -100 250 +150, -55 ~ +150
Unit
V V V mA mW
ELECTRICAL CHARACTERISTICS (TA = 25
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE hFE fT Cob NF (noise figures)
unless otherwise specified)
Min.
-60 -50 -5 -0.58 90 100 -
Typ.
-0.18 -0.62 200 -
Max.
-100 -100 -0.30 -0.68 600 6 20
Unit
V V V nA nA V V MHz pF dB IC=-50uA, IE = 0 IC=-1mA, IB = 0 IE=-50uA, IC = 0 VCB=-60V, IE = 0 VEB=-5V, IC = 0
Test Conditions
IC=-100mA, IB=-10mA VCE = -6V, IC = -1.0mA VCE=-6V, IC=-1mA VCE=-6V, IC=-10mA VCB = -10V, IE = 0, f = 1 MHz VCE=-6V, IC=-0.3mA, Rg=10k, f=100HZ
CLASSIFICATION OF hFE
Rank Range
R 90 - 180 Q 135 - 270 P 200 - 400 K 300 - 600
01-June-2005 Rev. B
Page 1 of 2
2SA733T
Elektronische Bauelemente -60 V, -150 mA PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
01-June-2005 Rev. B
Page 2 of 2


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